semihow rev.a0,dec 2007 HSB100-6 HSB100-6
semihow rev.a0,dec 2007 HSB100-6 sensitive gate silicon controlled rectifiers HSB100-6 absolute maximum ratings tc=25 unless otherwise specified to-92 g k a features ? repetitive peak off-state voltage : 400v ? r.m.s on-state current(it(rms)=0.8a) ? low on-state voltage (1.2v(typ.)@ itm) general description pnpn devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors , and sensing and detection circuits. supplied in an inexpensive plastic to-92 package which is readily adaptable for use in automat ic insertion equipment. symbol parameter value units v drm repetitive peak off- state voltage 400 v i t(rms) r.m.s on-state current (all conduction angles) 0.8 a i t(av) average on-state current (half sine wave : t c =74 ) 0.5 a i tsm surge on-state current (1/2 cycle, 60hz, peak, non repetitive) 10 a i 2 t circuit fusing considerations (t=8.3ms) 0.415 a 2 s p gm forward peak gate power dissipation (ta=25 )0 . 1 w p g(av) forward average gate power dissipation (ta=25 , t=8.3ms) 0.01 w v rgm reverse peak gate voltage 5 v i fgm forward peak gate current 1 a t stg storage temperature range -40 ~ 125 t j operating junction temperature -40 ~ 125 v drm = 400v i t(rms) = 0.8a
semihow rev.a0,dec 2007 HSB100-6 symbol parameter test conditions min typ max units i gt gate trigger current (1) v ak =7v, r l =100 ? 200 ? v gt gate trigger voltage (1) v ak =7v, r l =100 ? , ta=25 v ak =7v, r l =100 ? , ta=-40 0.8 1.2 v v v gd non trigger gate voltage v ak =12v, r l =100 ? , t c =125 0.2 v i h holding current v ak =12v, gate open, initiating current=50ma, ta=25 ta=-40 25 10 ? ? i drm repetitive peak off-state current v ak =v drm or v rrm , t c =25 v ak =v drm or v rrm , t c =125 10 200 ? ? v tm peak on-state voltage (2) i tm =1a, peak 1.2 1.7 v symbol parameter test conditions min typ max units r th(j-c) thermal resistance junction to case 1.3 v ~ r th(j-a) thermal resistance junction to ambient 60 v ~ electrical characteristics (ta=25 ) (1) r gk current is not included in measurement (2) forward current applied for 1ms maximum duration, duty cycle 1% thermal characteristics fig 1. HSB100-6 current derating (reference : case temperature) fig 2. HSB100-6 current derating (reference : ambient temperature) performance curves HSB100-6
semihow rev.a0,dec 2007 HSB100-6 4.58 0.25 3.71 0.2 3 4 0.46 0.1 1.27typ 1.27typ 1.02 0.1 3.71 0.25 3.6 0.25 4.58 0.25 14.47 0.5 package dimension to-92 dimensions in millimeters
semihow rev.a0,dec 2007 HSB100-6 h0 h h1 p p2 f1 f2 p1 d 0 w1 w0 w2 w item symbol dimension [mm] reference tolerance component pitch p 12.7 0.5 side lead to center of feed hole p1 3.85 0.5 center lead to center of feed hole p2 6.35 0.5 lead pitch fi,f2 2.5 +0.2/-0.1 carrier tape width w 18.0 +1.0/-0.5 adhesive tape width w0 6.0 0.5 tape feed hole location w1 9.0 0.5 adhesive tape position w2 1.0 max center of feed hole to bottom of component h 19.5 1 center of feed hole to lead form h0 16.0 0.5 component height h1 27.0 max tape feed hole diameter d0 4.0 0.2 package dimension to-92 taping
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